Laser excitation and relaxation processes of electron-hole pairs in gallium arsenide on a 100 fs time scale-Reference-Cited by-同舟云学术

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Laser excitation and relaxation processes of electron-hole pairs in gallium arsenide on a 100 fs time scale

Published:1990-01 Issue:1-6 Volume:45 Page:211-214
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Schäfer W.,Böhne G.,Sure T.,Ulbrich R.G.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference7 articles.

1. G. Böhne, T. Sure, R.G. Ulbrich and W. Schäfer, Phys. Rev. B, in press.

2. High Field Transport in Semiconductors;Conwell,1967

3. Electron transport properties in GaAs at high electric fields

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Introduction to Space Charge Effects in Semiconductors;Springer Series in Solid-State Sciences;2010

2. Linear response for systems far off equilibrium;Physica A: Statistical Mechanics and its Applications;1996-01

3. Far from equilibrium evolution in highly excited semiconductors with a consistent treatment of the photon field;Physica Scripta;1993-03-01

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