Internal photoluminescence of iron in GaAs and InP-Reference-Cited by-同舟云学术

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Internal photoluminescence of iron in GaAs and InP

Published:1988-02 Issue: Volume:40-41 Page:329-330
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Leyral P.,Charreaux C.,Guillot G.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference4 articles.

1. Iron in heat‐treated gallium arsenide

2. Proceedings Semi-Insulating III-V Materials;Leyral,1982

3. Proceedings Semi-Insulating III-V Materials;Bishop,1980

4. Radiative recombinations at the deep impurity centers in InP:Fe under YAG laser excitation

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The effect of electron-phonon interaction in iron-doped III-V cubic semiconductors;Journal of Physics: Condensed Matter;2000-03-09

2. Infrared luminescence and application of a vibronic-coupling Hamiltonian to the level structure of CdTe:Fe2+;Physical Review B;1994-08-15

3. Line-shape analysis of the vibronic levels of InP:Fe2+;Physical Review B;1994-01-15

4. Optical transitions in GaAs:Fe studied by Fourier-transform infrared spectroscopy;Physical Review B;1992-11-15

5. A model for the Fe‐related emission at 3057 cm−1 in GaAs;Journal of Applied Physics;1992-06

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