Deep center studies of nitrogen free and nitrogen doped VPE-GaAs0.35P0.65-led's
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics
Reference13 articles.
1. Green Electroluminescence from Gallium Phosphide Diodes near Room Temperature
2. Radiative recombination mechanisms in GaAsP diodes with and without nitrogen doping
3. Determination of effective nitrogen concentration in Ga(As,P):N light emitting diodes from photocurrent measurements
4. Capacitance Transient Spectroscopy
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Investigation of deep defects in GaAs1−P by double light source PHCAP;Journal of Luminescence;1988-02
2. Degradation of Yellow Light-Emitting GaAs0.1P0.9:N Diodes. 1. Implanted Diodes;Physica Status Solidi (a);1983-06-16
3. The role of nitrogen on the degradation behavior in LPE and VPE GaP:N light emitting diodes;IEEE Transactions on Electron Devices;1983-04
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