The study on the radial distribution of delta [Oi] in heavily doped Si wafer using X-ray diffraction-Reference-Cited by-同舟云学术

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The study on the radial distribution of delta [Oi] in heavily doped Si wafer using X-ray diffraction

Published:2001-02 Issue:1-3 Volume:4 Page:47-49
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Lee Dong-Kun,Hwang Don-Ha,Lee Soon-Hyun,Mun Young-Hee,Lee Bo-Young,Yoo Hak-Do

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference7 articles.

1. Intrinsic gettering by oxide precipitate induced dislocations in Czochralski Si

2. Minority carrier lifetime in annealed silicon crystals containing oxygen

3. Gilles D, Weber ER, Hahn SK, Cho K. Sumino K, editor. Defect control in semiconductors. Amsterdam: Elsevier, 1990. p. 323.

4. Effect of bulk microdefects induced in heat‐treated Czochralski silicon on dielectric breakdown of thermal SiO2films

5. Takeno H, Mizyno M, Ushio S, Takenaka T. Mater Sci Forum 1995; 196–201.

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4. Laser-Induced Spot Deposition of Copper on ITO Substrates via Pulsed-Potential Electrolysis;Journal of The Electrochemical Society;2003

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