Rapid determination of “slow” states and “fast” states densities using thermally stimulated conductance spectroscopy on metal-oxide semiconductor capacitors-Reference-Cited by-同舟云学术

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Rapid determination of “slow” states and “fast” states densities using thermally stimulated conductance spectroscopy on metal-oxide semiconductor capacitors

Published:2001-02 Issue:1-3 Volume:4 Page:141-143
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Duval E.,Soliman L.,Lheurette E.,Ketata K.,Benzohra M.,Duprat C.,Ketata M.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference17 articles.

1. Nicollian EH, Brews JR. MOS (Metal Oxide Semiconductor) Physics and Technology. New York: Wiley, 1982.

2. Nicollian EH, Goetzberger A. Appl Phys Lett 1965;7(8):216–9.

3. Barbottin G, Vapaille A, editors. Instabilities in Silicon Devices, Passivation and Related Instabilities, vol. 1 & 2. Amsterdam: Elsevier, 1989.

4. Sze SM. Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981.

5. Measurement of low densities of surface states at the SiSiO2-interface

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1. Defect spectroscopy using 1/fγ noise of gate leakage current in ultrathin oxide MOSFETs;Solid-State Electronics;2003-11

2. Determination of slow- and fast-state distributions using high-temperature conductance spectroscopy on MOS structures;Semiconductor Science and Technology;2001-08-28

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