Scanning capacitance microscopy investigations of SiC structures
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference8 articles.
1. Status and review of two-dimensional carrier and dopant profiling using scanning probe microscopy
2. Another dimension in device characterization
3. High Energy Implantation of Boron in 4H-SiC
4. Growth of 4H and 6H SiC Trenches and Around Stripe Mesas
5. Design and Performance of a New Reactor for Vapor Phase Epitaxy of 3C, 6H, and 4H SiC
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4. 2D dopant profiling on 4H silicon carbide P+N junction by scanning capacitance and scanning electron microscopy;MICROELECTRON RELIAB;2004
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