Precipitation of Sn in metastable, pseudomorphic Si0.95Sn0.05 films grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Precipitation of Sn in metastable, pseudomorphic Si0.95Sn0.05 films grown by molecular beam epitaxy

Published:2000-08 Issue:4 Volume:3 Page:251-255
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Ridder C,Fanciulli M,Nylandsted Larsen A,Weyer G

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference15 articles.

1. Pseudomorphic Si1−xSnx alloy films grown by molecular beam epitaxy on Si

2. Al-Sameen, Khan T, Berger PR, Guarin JF, Iyer SS. Appl Phys Lett 1995;68:3105.

3. Surface morphology of silicon–tin alloys grown by molecular beam epitaxy on Si and Si1−xGex substrates

4. Fyhn MF, Chevallier J, Nylandsted Larsen A. J Vac Technol 1999;B16:1777.

5. Hyperfine interactions of defects in semiconductors;Williamson,1992

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Light emission from silicon with tin-containing nanocrystals;AIP Advances;2015-07

2. Photoluminescence studies of Sn quantum dots in Si grown by MBE;Optical Materials;2005-02

3. Endotaxial Growth Mechanisms of Sn Quantum Dots in Si Matrix;MRS Proceedings;2003

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