Author:
Xiong Yong Zhong,Fu Jeffrey S.,Wang Hong,Ng Geok-Ing,Radhakrishnan K.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference7 articles.
1. Noise parameters of InP-based double heterojunction base–collector self-aligned bipolar transistors;Danelon;IEEE Microwave Guided Wave Lett,1999
2. A 50-MHz-55-GHz multidecade InP-based HBT distributed amplifier;Kobayashi;IEEE Microwave Guided Wave Lett,1997
3. Rodwell M, Lee Q, Mensa D, Guthrie J, Betser Y, Martin SC, Smith RP, Jaganathan S, Mathew T, Krishnan P, Serhan C, Long S. Transferred-substrate heterojunction bipolar transistor integrated circuit technology. In: Proceedings of the 11th International Conference on Indium Phosphide and Related Materials, 1999. p. 169–74.
4. Microwave noise performance of InP/InGaAs heterostructure bipolar transistors;Chen;IEEE Electron Device Lett,1989
5. Demonstration of Aluminum-free metamorphic InP/In0.53Ga0.47As/InP double heterojunction bipolar transistors on GaAs substrates;Wang;IEEE Electron Device Lett,2000