A simple method of mesa fabrication on DBR containing heterostructures-Reference-Cited by-同舟云学术

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A simple method of mesa fabrication on DBR containing heterostructures

Published:2002-12 Issue:6 Volume:5 Page:505-509
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Górska M.,Wrzesińska H.,Muszalski J.,Ratajczak J.,Mroziewicz B.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference4 articles.

1. Impact of plaenar microcavity effects on light extraction–Part 1;Benisty;IEEE J Quantum Electron,1998

2. Etch rates and selectivities of citric acid/hydrogen peroxide on GaAs, Al0.3Ga0.7As, In0.2Ga0.8As, In0.53Ga0.47As, In0.52Ga0.48As and InP;DeSolvo;J Electrochem Soc,1992

3. A wet technique for accurate etching of GaAs/AlAs distributed Bragg reflectors;Bacher;J Electrochem Soc,1995

4. Control of wet-etching thickness in the vertical cavity surface emitting laser by in situ laser reflectometry;Cho;J Vac Sci Technol B,1999

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1. Enhanced Interactions between Dipolar Polaritons;Physical Review Letters;2018-11-26

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