Quantum levels in Ge quantum dots studied by photocurrent spectroscopy and admittance spectroscopy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference12 articles.
1. N-electron ground state energies of a quantum dot in magnetic field
2. Spectroscopy of Quantum Levels in Charge-Tunable InGaAs Quantum Dots
3. Intraband absorption in Ge/Si self-assembled quantum dots
4. Normal-incidence infrared photoconductivity in Si p-i-n diode with embedded Ge self-assembled quantum dots
5. Intra-valence band photocurrent spectroscopy of self-assembled Ge dots in Si
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1. Direct Evaluation of the Quantum Confinement Effect in Single Isolated Ge Nanocrystals;The Journal of Physical Chemistry Letters;2015-08-18
2. Carrier transfer effect on transport inp-i-nstructures with Ge quantum dots;Physical Review B;2011-09-19
3. Spectrum of electron-hole states of the Si/Ge structure with Ge quantum dots;Journal of Experimental and Theoretical Physics;2011-09
4. Photoconductivity of Si/Ge multilayer structures with Ge quantum dots pseudomorphic to the Si matrix;Semiconductors;2011-07
5. Midinfrared photoresponse of Ge quantum dots on a strained Si0.65Ge0.35layer;Semiconductor Science and Technology;2011-05-23
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