Room temperature two-terminal characteristics in silicon nanowires
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference12 articles.
1. Single Electron Tunneling;Grabert,1992
2. A room-temperature single-electron memory device using fine-grain polycrystalline silicon
3. Effect of wire length on Coulomb blockade in ultrathin wires of recrystallized hydrogenated amorphous silicon
4. Coulomb blockade in a silicon tunnel junction device
5. Room temperature operation of Si single-electron memory with self-aligned floating dot gate
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