Cluster-model calculations of hyperfine coupling constants of dangling bond and weak bond in a-Si : H
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference23 articles.
1. Electron Spin Resonance in Amorphous Silicon, Germanium, and Silicon Carbide
2. Hyperfine studies of dangling bonds in amorphous silicon
3. Microscopic nature of coordination defects in amorphous silicon
4. Electron-nuclear double resonance of dangling-bond centres in a-Si:H
5. H1electron-nuclear-double-resonance-detected ESR of light-soaked undopeda-Si:H
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1. Electron-Spin Resonance (ESR) in Hydrogenated Amorphous Silicon (a-Si:H);Advanced Characterization Techniques for Thin Film Solar Cells;2016-07-22
2. Dangling-bond defect in a-Si:H: Characterization of network and strain effects by first-principles calculation of the EPR parameters;Physical Review B;2013-03-12
3. Ab initiostudy of electron paramagnetic resonance hyperfine structure of the silicon dangling bond: Role of the local environment;Physical Review B;2011-04-22
4. Electron-Spin Resonance (ESR) in Hydrogenated Amorphous Silicon (a-Si:H);Advanced Characterization Techniques for Thin Film Solar Cells;2011-04-07
5. Electron trapping by excited microvoids (ETEM)—an explanation of the Staebler–Wronski effect;Physica B: Condensed Matter;2004-12
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