Hole tunneling through highly transparent symmetric double-barrier semiconductor structures

Author:

Zhu J.-X.,Wang Z.D.,Gong C.-D.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Magnetotunneling of holes through single and double barriers using a multiband treatment;Physical Review B;2005-03-23

2. Off-zone-center or indirect band-gap-like hole transport in heterostructures;Physical Review B;2001-04-20

3. Strong wavevector dependence of hole transport in heterostructures;Superlattices and Microstructures;2001-03

4. Transverse momentum dependence of electron and hole tunneling in a full band tight-binding simulation [resonant tunnelling diodes];2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors (Cat. No.00TH8498)

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