Dependence of the activation energies on the well width in CdTe/ZnTe strained single quantum wells
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference16 articles.
1. Molecular beam epitaxial growth of high structural perfection, heteroepitaxial CdTe films on InSb (001)
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1. Stress effects on the photoluminescence energies and binding energies of excitons in ultra-thin ZnTe/CdTe/ZnTe quantum wells;Physica E: Low-dimensional Systems and Nanostructures;2016-04
2. Binding Energy of D0 and D− Impurity Centers in CdTe/ZnTe Spherical Quantum Dot;Journal of Nanoscience and Nanotechnology;2012-11-01
3. Binding Energy of the Hydrogenic Impurity in CdTe/ZnTe Spherical Quantum Dot;Acta Physica Polonica A;2011-08
4. Optical gains and interband transitions of CdTe/ZnTe single quantum wells;2009 9th International Conference on Numerical Simulation of Optoelectronic Devices;2009-09
5. Dependence of optical gain and interband transitions on the CdTe well width and temperature for CdTe/ZnTe single quantum wells;Optical and Quantum Electronics;2009-05
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