Concerted-exchange mechanism for antistructure pair defects in GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference10 articles.
1. Ion implantation for isolation of III-V semiconductors
2. Electrical isolation in GaAs by light ion irradiation: The role of antisite defects
3. Thermal stability of the electrical isolation inn-type gallium arsenide layers irradiated with H, He, and B ions
4. Evidence for an anti-structure-pair in GaAs generated by electron irradiation at room temperature obtained from optically detected electron-nuclear double resonance
5. Point defects and their reactions in electron-irradiated GaAs investigated by optical absorption spectroscopy
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1. Native point defects in ZnO;Physical Review B;2007-10-04
2. Electrical properties and diffusion behavior of hafnium in single crystal silicon;Applied Physics A;2006-06-28
3. [PIn](n)antisite clustering in InP;Physical Review B;1999-12-15
4. Intrinsic doping in InP: ab initio calculations of PIn antisites;Physica B: Condensed Matter;1999-12
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