Tunneling and electric-field effects on electron–hole localization in artificial molecules-Reference-Cited by-同舟云学术

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Tunneling and electric-field effects on electron–hole localization in artificial molecules

Published:2003-10 Issue:4 Volume:128 Page:147-151
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Troiani Filippo

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference19 articles.

1. Quantum Dots;Jacak,1998

2. Electron-hole localization in coupled quantum dots

3. Quantum phases in artificial molecules

4. Theoretical analysis of electron-hole alignment in InAs-GaAs quantum dots

5. Anomalous Quantum-Confined Stark Effects in StackedInAs/GaAsSelf-Assembled Quantum Dots

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Biexcitons in artificial molecules with in-plane magnetic field;Physica E: Low-dimensional Systems and Nanostructures;2005-02

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