Recombination in InGaAs/GaAs quantum wire lasers-Reference-Cited by-同舟云学术

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Recombination in InGaAs/GaAs quantum wire lasers

Published:1999-08 Issue:1 Volume:112 Page:55-60
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

DeVittorio M.,Rinaldi R.,Passaseo A.,DeGiorgi M.,Lomascolo M.,Visconti P.,Cingolani R.,Taurino A.,Catalano M.,DeCaro L.,Tapfer L.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference20 articles.

1. Multidimensional quantum well laser and temperature dependence of its threshold current

2. Electronic states and optical transitions in low-dimensional semiconductors

3. Chapter 4 Lateral Patterning of Quantum Well Heterostructures by Growth on Nonplanar Substrates

4. High efficiency and low threshold current strained V‐groove quantum‐wire lasers

5. Quantum wire microcavity laser made from GaAs fractional layer superlattices

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Piezoelectric effects in ultrahigh quality AlGaAs/GaAs single quantum wire;Physica E: Low-dimensional Systems and Nanostructures;2002-03

2. Nanoscale compositional fluctuations in multiple InGaAs/GaAs quantum wires;Journal of Applied Physics;2000-03

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