Monte Carlo simulation of electron transport due to hopping on band edge long-range-fluctuating with self-affine fractal dimension
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference10 articles.
1. Dispersive (non-Gaussian) transient transport in disordered solids
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1. Introducing the Step Monte Carlo Method for Simulating Dynamic Properties;Advanced Theory and Simulations;2023-09-19
2. Hopping transport at localized band tail states in amorphous hydrogenated silicon;physica status solidi (a);2010-02-02
3. Electron hopping-randomwalk at localized band tail states with exponential density in amorphous hydrogenated silicon;physica status solidi (c);2008-03
4. Hopping Transport of Electrons and Holes at Localized Band Tail States in Amorphous Hydrogenated Silicon and Amorphous Heavy-Hydrogenated Silicon;Japanese Journal of Applied Physics;2005-07-08
5. Dispersive photoluminescence decay by geminate recombination in amorphous semiconductors;Physical Review B;2005-06-30
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