Segregation layers of grain growth inhibitors at WC/WC interfaces in VC-doped submicron-grained WC–Co cemented carbides-Reference-Cited by-同舟云学术

Segregation layers of grain growth inhibitors at WC/WC interfaces in VC-doped submicron-grained WC–Co cemented carbides

Published:2015-09 Issue: Volume:52 Page:229-234
ISSN:0263-4368
Container-title:International Journal of Refractory Metals and Hard Materials
language:en
Short-container-title:International Journal of Refractory Metals and Hard Materials

Author:

Kawakami Masaru,Kitamura Kozo

Funder

New Energy and Industrial Technology Development Organization (NEDO) for the Development Project on Fusion Technology of Material and Mold Processing for High-Precision Component

Publisher

Elsevier BV

Subject

General Medicine

Reference29 articles.

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4. Morphology of vanadium carbide in submicron hardmetals;Egami,2005

5. Sintering behavior of VC-doped micro-grained cemented carbide;Taniuchi,1997

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