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SPH and FE coupled 3D simulation of monocrystal SiC scratching by single diamond grit

  • Published:2017-04 Issue: Volume:64 Page:279-293
  • ISSN:0263-4368
  • Container-title:International Journal of Refractory Metals and Hard Materials
  • language:en
  • Short-container-title:International Journal of Refractory Metals and Hard Materials

Author:

Duan Nian,Yu Yiqing,Wang Wenshan,Xu Xipeng

Funder

National Natural Science Foundation of China

Specialized Research Fund for the Doctoral Program of Higher Education

Department of Education in Fujian Province/China

Publisher

Elsevier BV

Subject

General Medicine

Reference29 articles.

1. Status of silicon carbide (SiC) as a wide-band gap semiconductor for high-temperature applications;Casady;Solid State Electron.,1996

2. Single-grit modeling and simulation of crack initiation and propagation in SiC grinding using maximum undeformed chip thickness;Zhu;Comput. Mater. Sci.,2014

3. Grinding Technology Theory and Applications of Machining With Abrasives;Malkin,1989

4. Use of FIB/SEM to assess the tribo-corrosion of WC/Co hardmetals in model single point abrasion experiments;Gant;Tribol. Int.,2013

5. Mechanical wear of different crystallographic orientations for single abrasive diamond scratching on Ta12W;Wu;Wear,2016
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