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Optimization of diode-pumped doubly Q-switched mode-locked laser with electro-optic modulator and GaAs saturable absorber

  • Published:2013-12 Issue: Volume:54 Page:371-375
  • ISSN:0030-3992
  • Container-title:Optics & Laser Technology
  • language:en
  • Short-container-title:Optics & Laser Technology

Author:

Feng Tianli,Zhao Shengzhi,Yang Kejian,Li Dechun,Li Guiqiu,Zhao Jia

Funder

National Science Foundation of China for Youths

National Science Foundation of China

Natural Science Foundation of Shandong Province

Science and Technology Development Program of Shandong Province

China Postdoctoral Science Foundation

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Q-switched mode-locking by Cr4+:YAG in a laser-diode-pumped c-cut Nd:GdVO4 laser;Zhang;Optics Communications,2004

2. Continuous wave and Q-switched mode-locking of a Nd:YVO4 laser with a single crystal GaAs wafer;Shen;Japanese Journal of Applied Physics,2002

3. Diode- pumped, Cr:YAG passively Q-switched and mode-locked Nd:YVO4/KTP green laser;Wang;Chinese Optics Letters,2003

4. High-power passively Q-switched mode-locking Nd:GdVO4 laser with LT-InGaAs saturable absorber;Wang;Laser Physics,2009

5. Passively Q-switched diode-pumped Nd:YVO4/Cr4+:YAG single-frequency microchip laser;Chen;Electronics Letters,1997

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