Optimization of facet coating for highly strained InGaAs quantum well lasers operating at 1200nm

Author:

Kheraj V.A.,Panchal C.J.,Patel P.K.,Arora B.M.,Sharma T.K.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. High-power highly strained ingaas quantum-well laser operating at 1.2μm;Sharma;IEEE Photonic Tech Lett,2002

2. Properties and frequency conversion of high-brightness diode-laser system;Boller,2000

3. Properties of thin film layers for optical applications: A tutorial;Pellicori;Coating Materials News,2003

4. Unger P. Introduction to power diode lasers. In: Diehl R, Editor. High Power Diode Lasers, Topics Appl. Phys. 78. Berlin, Heidelberg: Springer, 2000, p. 1–54.

5. High-power semiconductor lasers;Mehuys,1999

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