Effect of Nb doping on the microstructural and electrical properties of the PZT ceramics

Author:

Pereira M.,Peixoto A.G.,Gomes M.J.M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Ceramics and Composites

Reference14 articles.

1. Ferroelectric Transducers and Sensors;Herbert,1985

2. Moulson, A. J. and Herbert J. M., Electroceramics — Materials-Properties-Applications. Chapman et Hall, London, (pp. 79 and 247–248).

3. The domain switching and structural characteristics of PLZT bulk ceramics and thin films chemically prepared from the same acetate precursor solutions;Dausch;J. Mater. Sci.,1996

4. Distribution of A-site and B-site vacancies in (Pb,La)(Ti,Zr)O3 ceramics;Härdtl;J. Am. Ceram. Soc.,1972

5. Dopant compensation mechanism and leakage current in Pb(Zr0.52Ti0.48)O3 thin films;Barlingay;Thin Solid Films,1996

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