Electronic interface states at grain boundaries in ZnO:Pr varistors by single grain boundary measurements

Author:

Mukae Kazuo,Ohi Akihiko,Tanaka Akinori

Publisher

Elsevier BV

Subject

Materials Chemistry,Ceramics and Composites

Reference7 articles.

1. Interface states at grain boundaries and their effects on the I–V characteristics in ZnO:Pr varistors;Mukae;Ceramic Transaction,1994

2. Isothermal capacitance transient spectroscopy for determination of deep level parameters;Ohkushi;Jpn. J. Appl. Phys.,1980

3. Isothermal capacitance transient spectroscopy in ZnO varistor;Maeda;Jpn. J. Appl. Phys.,1989

4. Characterization of interface states in ZnO varistors using isothermal capacitance transient spectroscopy;Tsuda;J. Ceram. Soc. Jpn.,1992

5. Electronic characterization of single grain boundary in ZnO:Pr varistors;Mukae;Ceramics International,2000

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