Kinetic energy enhanced molecular beam epitaxial growth of Si{100}
Author:
Publisher
Elsevier BV
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Reference20 articles.
1. Crystal growth kinetics in (GaAs)n−(AlAs)m superlattices deposited by molecular beam epitaxy
2. Initial stages of silicon molecular-beam epitaxy: Effects of surface reconstruction
3. Germanium and Silicon Film Growth by Low-Energy Ion Beam Deposition
4. Ion‐beam plating using mass‐analyzed ions
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