Hole traps in n-type epitaxial GaAs layers grown by the close-spaced vapor transport technique-Reference-Cited by-同舟云学术

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Hole traps in n-type epitaxial GaAs layers grown by the close-spaced vapor transport technique

Published:1990-04 Issue:4 Volume:74 Page:223-226
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Bretagnon T.,Jean A.,Arnaud G.,Bastide G.

Funder

Fonds pour la Formation de Chercheurs et l'Aide à la Recherche

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference25 articles.

1. The Use of Close Spacing in Chemical-Transport Systems for Growing Epitaxial Layers of Semiconductors

2. Photovoltaic properties of five II‐VI heterojunctions

3. Photoluminescence of epitaxial GaAs grown by close space vapor transport method

4. Photoluminescence and electrical properties of close space vapor transport GaAs epitaxial layers

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Midgap electron traps in n-type GaAs epitaxial layers grown by the close-spaced vapor transport technique;Canadian Journal of Physics;1991-03-01

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