Donor-acceptor pair recombination in n-GaAs: The isolated-pair model revisited
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference14 articles.
1. Pair Spectra in GaP
2. Kinetics of Radiative Recombination at Randomly Distributed Donors and Acceptors
3. Impurity States in Semiconducting Masers
4. Gallium Arsenide Lasers;Adams,1969
5. Radiative recombination rate of donor–acceptor pairs
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2. Assessment of compensation ratio in high-purity GaAs using photoluminescence;Materials Science and Engineering: B;1997-02
3. The influence of impurity concentration on exciton photoluminescence in GaAs and InP;Semiconductor Science and Technology;1992-11-01
4. The valence band tail state filling in heavily doped and compensated crystals of gallium arsenide;Physica Status Solidi (a);1988-11-16
5. Time-Resolved Studies on Recombination Luminescence of Donor-Acceptor Pairs in ZnSe;Japanese Journal of Applied Physics;1986-10-20
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