Subband structure calculation for inversion layers in InAs and InP
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference13 articles.
1. Magnetoconductance study of inversion layers on InAs metal‐insulator‐semiconductor field‐effect transistors
2. Extended Abstract of the International Conference on Solid State Devices and Materials;Yamaguchi,1984
3. Electron subbands and transport properties in inversion layers of InAs and InP
4. Self-Consistent Theory of the Electronic Structure of Inversion Layers. I. A New Method Using the Modified Local Density Approximation
5. Self-consistent theory of the electronic structure of inversion layers. II. Quantum effects and the electronic properties of MIS structures
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Determination of subband spacing in inversion layers onp-type InAs;Physical Review B;1992-05-15
2. Giant diamagnetic effect in InAs electron inversion layers measured by Zener tunneling;Physical Review B;1990-01-15
3. Theory of self-consistency effects in the electronic structure of inversion layers in a perpendicular magnetic field;Surface Science;1989-12
4. Landau levels and SdH-oscillations of the quasi two-dimensional electron gas at grain boundaries and near heterojunctions;Surface Science;1989-04
5. Modified Thomas-Fermi theory for depletion and accumulation layers inn-type GaAs;Physical Review B;1989-01-15
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