High sensitivity of electroreflectance to stark-ladder transitions in a GaAs/AlAs superlattice
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference14 articles.
1. Electric-Field-Induced Localization and Oscillatory Electro-optical Properties of Semiconductor Superlattices
2. Observation of the Wannier-Stark Quantization in a Semiconductor Superlattice
3. Room‐temperature electroabsorption and switching in a GaAs/AlGaAs superlattice
Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electric field effects on reduced effective masses of minibands at the mini-Brillouin-zone center and edge in a GaAs/AlAs superlattice;Journal of Applied Physics;2012-03
2. Miniband-width effects on Wannier–Stark localization of the first and second quantized states in a GaAs/AlAs superlattice;Journal of Luminescence;2007-01
3. Electroreflectance Observation of Transformation Processes of the First and Second Minibands to Wannier–Stark Localization States in a GaAs/AlAs Superlattice;Japanese Journal of Applied Physics;2005-12-08
4. Interfacial behaviour of a quantum well electrode|electrolyte: EER spectra of an SQW GaAs|Al x Ga 1−x As electrode in HQ + BQ non-aqueous electrolyte;Journal of Electroanalytical Chemistry;1997-06
5. Electric-field effects on above-barrier states in a GaAs/AlxGa1−xAs superlattice;Physical Review B;1995-02-15
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