Band structure and high-pressure phase transition in GaN-Reference-Cited by-同舟云学术

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Band structure and high-pressure phase transition in GaN

Published:1991-11 Issue:5 Volume:80 Page:335-338
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Gorczyca I.,Christensen N.E.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference19 articles.

1. High Pressure Chemical Synthesis;Porowski,1989

2. P. Perlin, C. Jauberthie-Carillon, J.P. Itite, A. San Miguel, I. Grzegory & A. Polian (to be published).

3. Quantum Dielectric Theory of Electronegativity in Covalent Systems. I. Electronic Dielectric Constant

4. Calculation of Energy-Band Pressure Coefficients from the Dielectric Theory of the Chemical Bond

5. Linear methods in band theory

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1. Toward Red Light Emitters Based on InGaN-Containing Short-Period Superlattices with InGaN Buffers;Materials;2023-11-27

2. Precise band gap engineering using double barrier InGaN/GaN superlattices;Micro and Nanostructures;2022-09

3. Band gap tuning in InxGa1-xN/InyGa1-yN short period superlattices;Superlattices and Microstructures;2021-07

4. Theoretical study of nitride short period superlattices;Journal of Physics: Condensed Matter;2018-01-17

5. Band gap engineering of In(Ga)N/GaN short period superlattices;Scientific Reports;2017-11-22

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