An investigation of the valley splitting in n-channel silicon 〈100〉 inversion layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference26 articles.
1. Theory of Valley Splitting in an N-Channel (100) Inversion Layer of Si I. Formulation by Extended Zone Effective Mass Theory
2. Theory of Valley Splitting in an N-Channel (100) Inversion Layer of Si II. Electric Break Through
3. Theory of Valley Splitting in an N-Channel (100) Inversion Layer of Si III. Enhancement of Splittings by Many-Body Effects
4. Electric break-through in an inversion layer: Exactly solvable model
5. Effect of interface on the effective mass approximation
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1. Genetic design of enhanced valley splitting towards a spin qubit in silicon;Nature Communications;2013-09-09
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