Diffusion and trapping in ZnS:Mn electroluminescent thin films
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference12 articles.
1. Recherches sur les scintillations des sulfures de zinc aux rayons α
2. On the aging of ZnS:Mn electroluminescent thin films grown by the atomic layer epitaxy technique
3. Energy migration in randomly doped crystals : geometrical properties of space and kinetic laws
4. P. Evesque & J. Duran, J. Chem. Phys. (to be published).
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1. Luminescence Saturation via Mn2+–Exciton Cross Relaxation in Colloidal Doped Semiconductor Nanocrystals;The Journal of Physical Chemistry C;2012-04-17
2. Growth, characterization and modeling of alternating-current thin-film electroluminescent devices;Progress in Crystal Growth and Characterization of Materials;2001-01
3. Quenching of the luminescence of ZnS:Mn at high excitation levels;Journal of Applied Spectroscopy;1991-11
4. Luminescence concentration quenching due to energy migration in ZnS:Mn with fixed trap density;Journal of Luminescence;1990-05
5. Optical Properties of (Zn, Mn) and (Cd, Mn) Chalcogenide Mixed Crystals and Superlattices;physica status solidi (b);1988-03-01
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