Deformation potential LO-phonon Raman scattering near the EO-gap in AlxGa1−xAs-alloy. Excitonic effects
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference24 articles.
1. Preparation and Properties of AlAs-GaAs Mixed Crystals
2. Temperature dependence of the indirect absorption edge in AlxGa1−xAs
3. Some optical properties of the AlxGa1−xAs alloys system
4. Molecular beam epitaxy and optical evaluation of AlxGa1-xAs
5. Electroreflectance Spectra of AlxGa1−xAs Alloys
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Two-LO-phonon resonant Raman scattering in ii-vi semiconductors;physica status solidi (b);1996-08-01
2. Temperature dependence of the dielectric function and the interband critical-point parameters ofAlxGa1−xAs;Physical Review B;1991-05-15
3. One-phonon resonant Raman scattering inAlxGa1−xAs (0.5;Physical Review B;1990-12-15
4. On the lifetime broadening of theEv10andEv20excitons in the GaAs/AlxGa1−xAs alloy system;Journal of Applied Physics;1990-05
5. Resonant Raman scattering by LO phonons inAlxGa1−xAs (0.2;Physical Review B;1989-07-15
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