Different annealing behaviour of the metastable state in GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference11 articles.
1. Electron traps in bulk and epitaxial GaAs crystals
2. Evidence for the creation of the main electron trap in bulk GaAs
3. A study of deformation-produced deep levels inn-GaAs using deep level transient capacitance spectroscopy
4. Identification of EL2 in GaAs
5. Variation of the midgap electron traps (EL2) in liquid encapsulated Czochralski GaAs
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. EBIC and cathodoluminescence evaluation of III–V compounds;Materials Science and Engineering: B;1994-05
2. Dislocation energy bands in GaAs: An optical absorption study;Journal of Applied Physics;1990-01
3. A quantitative study of the creation of EL2 defects in GaAs by plastic deformation;Journal of Applied Physics;1989-02-15
4. Infra-red imaging and EL2;Revue de Physique Appliquée;1988
5. Deep-level symmetry studies using ballistic-phonon transmission in undoped semi-insulating GaAs;Physical Review B;1987-08-15
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