Electron traps in GaS-Reference-Cited by-同舟云学术

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Electron traps in GaS

Published:1976-01 Issue:8 Volume:18 Page:1063-1066
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Manfredotti C.,De Blasi C.,Galassini S.,Micocci G.,Ruggiero L.,Tepore A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference18 articles.

1. Deep hole traps inp-type GaSe single crystals

2. Space-charge limited currents in n-GaSe crystals

3. MANFREDOTTI C., MURRI R., RIZZO A. VASANELLI L. (to be published).

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Space-charge-limited current analysis in amorphous InSe thin films;Journal of Materials Science: Materials in Electronics;2004-04

2. Trapping centers in undoped GaS layered single crystals;Applied Physics A;2003-08

3. Electrical properties of n-GaSe single crystals doped with chlorine;Journal of Applied Physics;1997-09

4. Space‐charge‐limited currents in amorphous gallium sulfide thin films;Journal of Applied Physics;1991-01

5. Investigation of electronic properties of gallium sulfide single crystals grown by iodine chemical transport;Journal of Applied Physics;1990-07

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