Transport properties of photo-excited carriers in slightly compensated Hg0.785Cd0.215Te
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference16 articles.
1. Calculation of Ionized-Impurity Scattering Mobility of Electrons inHg1−xCdxTe
2. Electron Mobility in Hg1−xCdxTe
3. Transient carrier decay and transport properties inHg1−xCdxTe
4. Scattering mechanisms inHg1−xCdxTe
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1. Electron–Hole Scattering In Quantum Wells;Hot Carriers in Semiconductor Nanostructures;1992
2. Electron-hole scattering in GaAs quantum wells;Physical Review B;1988-04-15
3. Electron-hole drag in semiconductors;Solid-State Electronics;1988-03
4. ELECTRON-HOLE DRAG IN SEMICONDUCTORS;Hot Carriers in Semiconductors;1988
5. Photo‐Hall analysis for inhomogeneously excited semiconductors;Journal of Applied Physics;1985-05-15
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