Microscopic models of Hg+, Auo and Pt- isoelectronic interstitial impurities in silicon
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference31 articles.
1. Electronic structure of gold substitutional impurity in silicon
2. Watson-sphere-terminated model applied to theAu0andPt−substitutional impurities in silicon
3. Electronic Structure of Transition Metal Ions in a Tetrahedral Lattice
4. Spin Resonance of Transition Metals in Silicon
5. Electron Spin Resonance in Semiconductors
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electronic properties and hyperfine parameters of gold–3d-transition-metal impurity pairs in silicon;Physical Review B;1998-08-15
2. Chemical Trends in Electronic Properties of Gold-3D Transition Metal Impurity Pairs in Silicon;MRS Proceedings;1997
3. Self-consistent one-electron states of substitutional and interstitial5dtransition-atom impurities in silicon;Physical Review B;1986-11-15
4. Electronic structure of the Au-Mn pair complex in silicon;Solid State Communications;1986-06
5. The noble gas atoms as impurities in silicon;International Journal of Quantum Chemistry;1986-03-10
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