Compensation-induced optical transitions within the ground state of shallow donors in Ge and Si-Reference-Cited by-同舟云学术

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Compensation-induced optical transitions within the ground state of shallow donors in Ge and Si

Published:1984-02 Issue:8 Volume:49 Page:791-794
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Trylski J.,Glazer J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference9 articles.

1. Far-Infrared Absorption Spectra of Impurity Band in n-Type Germanium

2. Proc. Int. Conf. on Impurity Bands in Semiconductors;Capizzi,1979

3. Proc. 12th Int. Conf. Phys. Semicond.;Gonzalez,1974

4. Theory ofD−states in Ge and Si

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of chemical and spin disorder on shallow impurity states in semiconductor alloys;physica status solidi (b);1986-04-01

2. Optical Properties of the Impurity Intervalley Multiplet in Ge-Type Semiconductors in Uniform Constant Electric Field;physica status solidi (b);1985-05-01

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