Experimental band structure and Fermi surface of a two-dimensional Er silicide on Si(111)-Reference-Cited by-同舟云学术

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Experimental band structure and Fermi surface of a two-dimensional Er silicide on Si(111)

Published:1992-04 Issue:4 Volume:82 Page:235-238
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Wetzel P.,Pirri C.,Paki P.,Peruchetti J.C.,Bolmont D.,Gewinner G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference15 articles.

1. Epitaxial growth of rare‐earth silicides on (111) Si

2. Fabrication and structure of epitaxial Er silicide films on (111) Si

3. Epitaxial growth of ErSi2 on (111) Si

4. Low Schottky barrier of rare‐earth silicide onn‐Si

5. P. Paki, U. Kafader, P. Wetzel, C. Pirri, J.C. Peruchetti, D. Bolmont and G. Gewinner, Phys. Rev. B (in press)

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1. Continuous crossover from two-dimensional to one-dimensional electronic properties for metallic silicide nanowires;Physical Review B;2020-09-24

2. Growth and electronic properties of Tb silicide layers on Si(111);Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2016-11

3. Rare-earth silicide thin films on the Si(111) surface;Physical Review B;2016-05-06

4. Submonolayer Rare Earth Silicide Thin Films on the Si(111) Surface;High Performance Computing in Science and Engineering ´16;2016

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