New method for the electronic structure of heterojunctions — Application to the (100) Ge-GaAs interfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference17 articles.
1. Heterojunctions and Metal-Semiconductor Junctions;Milnes,1972
2. Self-Consistent Calculation of the Electronic Structure at an Abrupt GaAs-Ge Interface
3. Electronic structure at an abrupt GaAs–Ge interface
4. Band Structure of AlAs-GaAs(100) Superlattices
5. Self-consistent calculations of interface states and electronic structure of the (110) interfaces of Ge-GaAs and AlAs-GaAs
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1. Koster-Slater model for the interface-state problem;Physical Review B;2000-10-15
2. Electronic structure of the ZnTe/CdSe(100) interfaces with atom interchange;Acta Physica Sinica (Overseas Edition);1999-09
3. ELECTRONIC STRUCTURE OF SEMICONDUCTOR INTERFACES*;Le Journal de Physique Colloques;1984-04
4. Theory of semiconductor heterojunctions;Thin Solid Films;1983-06
5. Angle-resolved local density of states of zinc-blende semiconductor (110) surfaces: An analytic Green's-function approach;Physical Review B;1982-10-15
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