Minority carrier lifetime in highly doped Ge-Reference-Cited by-同舟云学术

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Minority carrier lifetime in highly doped Ge

Published:1972-02 Issue:3 Volume:10 Page:321-323
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Conradt R.,Aengenheister J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference14 articles.

1. Photon-Radiative Recombination of Electrons and Holes in Germanium

2. Statistics of the Recombinations of Holes and Electrons

3. Int. Conf. Phys. Semicond.;Karpova,1962

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