Mutual transformation of thermal and anodic SiO2 films-Reference-Cited by-同舟云学术

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Mutual transformation of thermal and anodic SiO2 films

Published:1966-04 Issue:4 Volume:4 Page:169-172
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Schmidt P.F.,Rand M.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference12 articles.

1. Stabilization of Silicon Surfaces by Thermally Grown Oxides*

2. TUNG S.K. and DROBEK J. (to be published).

3. Growth and Structure of Si Oxide Films on Si Surface

4. Recent News Paper, Electrochem. Soc. spring meeting;Stickler,1965

5. to be published Electrochem. Technology.

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. X‐ray‐diffraction investigation of the anodic oxidation of porous silicon;Journal of Applied Physics;1996-05-15

2. Localized anodic oxide films on Si: preparation and properties;Electrochimica Acta;1994-06

3. Anodic oxidation as a method for low temperature passivation of silicon radiation detectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1993-03

4. Optimization of Anodic Silicon Oxide Films for Low Temperature Passivation of Silicon Surfaces;Journal of The Electrochemical Society;1993-01-01

5. The electrophysical properties of anodically grown silicon oxide films;Thin Solid Films;1989-01

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