Resonance and relaxation ultrasonic attenuation in p-GaAs: Mn at low temperature-Reference-Cited by-同舟云学术

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Resonance and relaxation ultrasonic attenuation in p-GaAs: Mn at low temperature

Published:1988-12 Issue:11 Volume:68 Page:1025-1028
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Averkiev N.S.,Gutkin A.A.,Krasikova O.G.,Osipov E.B.,Reshchikov M.A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference12 articles.

1. The model of deep center MnGa in GaAs;Averkiev,1988

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1. MnGa Acceptor Center in GaAs (Review);Physics of the Solid State;2018-12

2. Relaxation and resonance ultrasound attenuation by Jahn-Teller centers in a GaAs:Cu crystal;JETP Letters;2012-10

3. Resonant and relaxation absorption of ultrasound by anisotropic Jahn-Teller centers in GaAs;Physics of the Solid State;2012-03

4. Ultrasonic evaluation of the Jahn–Teller effect parameters. Application to ZnSe:Cr2 +;Journal of Physics: Condensed Matter;2011-03-03

5. Experimental Evaluation of the Jahn-Teller Effect Parameters by Means of Ultrasonic Measurements. Application to Impurity Centers in Crystals;Vibronic Interactions and the Jahn-Teller Effect;2011

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