A quantitative study of the piezooptical activity in GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference21 articles.
1. Stress-induced optical activity in the zincblende-type semiconductors
2. Physics of Narrow Gap Semiconductors;Trebin,1978
3. Quantum resonances in the valence band of zinc-blende semiconductors. II. Results forp-InSb under uniaxial stress
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1. Experimental and phenomenological aspects of circular birefringence and related properties in transparent crystals;Reports on Progress in Physics;2000-09-28
2. On the existence of piezo-electrogyration in crystals;Journal of Physics: Condensed Matter;2000-02-03
3. Optical Activity in Semiconductors: Stress and Confinement Effects;physica status solidi (b);1998-02
4. Semiconductors under Uniaxial Strain;physica status solidi (b);1996-11-01
5. Gallium arsenide (GaAs), piezooptic constants, piezobirefringence;Group IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport, Optical and Other Properties
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