Study of ideal vacancies in ZnS and ZnO (Wurtzite)

Author:

Barnoussi M,Bouhelal A,Albert J.P,Gout C

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference13 articles.

1. Proc. of the 15th Int. Conf. Physics of Semiconductors,1980

2. Tight-binding calculation of the properties of theFcenter and of isoelectronic defects in ZnS

3. Proc. 16th Int. Conf. Physics of Semiconductors;Tchakpele,1982

4. An oxygen pseudopotential: Application to the electronic structure of ZnO

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3. Semiempirical Construction of LCAO Parameters for II–VI Compound Semiconductors;physica status solidi (b);1989-05-01

4. Excitons Bound to Te Impurities in CdS, ZnS, and Their Mixed Compounds with Wurtzite Structure;physica status solidi (b);1988-10-01

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