Valence band mixing in GaAs-(AlGa)As heterostructures-Reference-Cited by-同舟云学术

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Valence band mixing in GaAs-(AlGa)As heterostructures

Published:1985-06 Issue:10 Volume:54 Page:859-862
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Sooryakumar R.,Chemla D.S.,Pinczuk A.,Gossard A.C.,Wiegmann W.,Sham L.J.

Funder

National Science Foundation

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference16 articles.

1. Resonant tunneling in semiconductor double barriers

2. Quantum States of Confined Carriers in Very ThinAlxGa1−xAs-GaAs-AlxGa1−xAsHeterostructures

3. Intrinsic radiative recombination from quantum states in GaAs-AℓxGa1−xAs multi-quantum well structures

4. Superlattice band structure in the envelope-function approximation

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