The phonon sidebands of NNi pair emission in GaP:N
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference10 articles.
1. Isoelectronic Traps Due to Nitrogen in Gallium Phosphide
2. III–V compound Semiconductors;Dean,1977
3. Excited states of excitons bound to nitrogen pairs in GaP
4. Thermal quenching processes in the low temperature photoluminescence of excitons bound to nitrogen pairs in GaP
5. Proc. of the First General Conference of the Condensed Matter Division of the European Physical Society;Chang,1980
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Discrete and continuous spectrum of nitrogen-induced bound states in heavily dopedGaAs1−xNx;Physical Review B;2001-02-05
2. Behavior of nitrogen impurities in III–V semiconductors;Journal of Luminescence;2000-01
3. Phonon sidebands of excitons bound to isoelectronic impurities in semiconductors;Physical Review B;1993-03-15
4. Comment on ‘‘Radiative and nonradiative recombination of bound excitons in GaP:N. I. Temperature behavior of zero-phonon line and phonon sidebands of bound excitons’’ and ‘‘ Radiative and nonradiative recombination of bound excitons in GaP:N. IV. Formation of phonon sidebands of bound excitons’’;Physical Review B;1992-08-15
5. Comment on ‘‘Radiative and nonradiative recombination of bound excitons in GaP:N. I. Temperature behavior of zero-phonon line and phonon sidebands of bound excitons’’;Physical Review B;1992-05-15
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