Temperature dependence of the absorption edge in CdTe:O amorphous thin films-Reference-Cited by-同舟云学术

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Temperature dependence of the absorption edge in CdTe:O amorphous thin films

Published:1992-10 Issue:4 Volume:84 Page:409-411
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Espinoza-Beltrán F.J,Sánchez-Sinencio F,Zelaya-Angel O,López-Cruz E,González-Hernández J,Ramírez-Bon R,Torres-Delgado G

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference9 articles.

1. Variable Energy Gap in Oxygenated Amorphous Cadmium Telluride

2. Amorphous and Liquid Semiconductors;Tauc,1974

3. Temperature shift of the absorption edge in mixed single crystals ofZnxCd1−xSe

4. Contribution of Lattice Dilation to the Temperature Shift of the Energy Gaps in Trigonal Selenium

5. Temperature dependence of the energy gap in semiconductors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Transient photocurrents in CdTe and CdTe:O sputtered films;Solid State Communications;1993-10

2. Characterization of the a-CdTe:O ternary compound grown by RF sputtering;Journal of Physics: Condensed Matter;1993-08-16

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