Binding energy of the exciton-phonon system in GaAs-Ga1−xAlxAs quantum well structures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference10 articles.
1. Energy levels of hydrogenic impurity states in GaAs-Ga1−xAlxAs quantum well structures
2. Observation of the excited level of excitons in GaAs quantum wells
3. Exciton binding energy in quantum wells
4. Energy levels of Wannier excitons inGaAs−Ga1−xAlxAsquantum-well structures
5. Wannier excitons in GaAs-Ga1−xAlxAsquantum-well structures: Influence of the effective-mass mismatch
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1. Effect of electron–phonon interaction on the impurity binding energy in a quantum wire;Physica B: Condensed Matter;2000-09
2. Exciton–LO-phonon interaction in zinc-compound quantum wells;Physical Review B;2000-04-15
3. The effect of electron-phonon interaction on the impurity binding energy in a quantum well;Journal of Physics: Condensed Matter;1999-10-05
4. Polaronic effects on excitons in quantum wells;Physical Review B;1998-01-15
5. Exciton-phonon interaction effects in quantum wells;Physical Review B;1997-07-15
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