On the linewidths of intersubband transitions on GaAs-AlxGa1−xAs quantum wells in electric field
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference10 articles.
1. New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlattices
2. Resonant tunneling through double barriers, perpendicular quantum transport phenomena in superlattices, and their device applications
3. Kinetics of island formation at the interfaces of AlGaAs/GaAs/AlGaAs quantum wells upon growth interruption
4. Effective-mass-mismatch-induced intersubband absorption line broadening in semiconductor quantum wells
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1. Plasmon resonance enhanced colloidal HgSe quantum dot filterless narrowband photodetectors for mid-wave infrared;Journal of Materials Chemistry C;2017
2. Direct measurement of population-induced broadening of quantum well intersubband transitions;Applied Physics Letters;1997-08-11
3. Electronic and Optical Properties of Semiconductor Quantum Wells and Superlattices;Materials Science Forum;1996-05
4. Calculation of x-valley intersubband optical transitions linewidth in [111] grown AlAs/(GaAl)As quantum wells;Solid State Communications;1993-01
5. Influence of ionized impurities on the linewidth of intersubband transitions in GaAs/GaAlAs quantum wells;Applied Physics Letters;1992-04-27
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